Cristian RAVARIU, Avireni SRINIVASULU, Appasani BHARGAV. A biomimetic device for the action potential simulation at neuronal level. Advanced Nano-Bio-Materials and Devices; 2020:4(4):623-629

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Cristian RAVARIU, Avireni SRINIVASULU, Appasani BHARGAV. A biomimetic device for the action potential simulation at neuronal level. Advanced Nano-Bio-Materials and Devices; 2020:4(4):623-629

This paper presents a conceptual Metal-Oxide-Semiconductor structure, but applied to biomimetic functions. The proposed structure is an alternative solution to the Nothing On Insulator (NOI) device. By a rotation of 900 the vertical NOI structure becomes a planar NOI structure, based on a beneficial oxide tunneling current through sub-10nm oxide. In this paper, this planar device is called planar-Nothing On Insulator (p-NOI) device. Its work principle is derived from the NOI concept, but the vacuum is replaced by oxide. Oxide has the same dielectric permittivity as myelin. The ionic charge in intra- or extra-cellular environment can be easily adapted by appropriate doping concentration in semiconductor. The ionic channels that cross the cellular membrane are placed at 500nm and allow the electric charge transport through membrane. Due to this analogy, a p-NOI biomimetic device is proposed to simulate the resting and action potential at a membrane level and the biosignal propagation through ionic channels. By simulations, the p-NOI device enables new functionalities as neuro-morphic device, mimicking the resting/action potential transmission over the bilipid membrane.