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Cristian RAVARIU, Florin BABARADA; Resizing and Reshaping of the Nothing on Insulator NOI Transistor; Advanced Nano-Bio-Materials and Devices; 2017:1(1):18-23
The paper presents some advances of a vacuum nano-transistor, known as Nothing On Insulator NOI device. The breakdown limitations are considered for ultra-thin buried oxide and different semiconductor islands shape. The relationship between oxide / semiconductor thickness and the breakdown voltage of the structure allow the gate limit voltage increasing from -6.5V to -12V using 15nm instead 10nm buried oxide. Reshaping the NOI transistor, a special semiconductor wall with one cube of roughnesses is analysed. The 1-cube variant has intermediate performances, as the maximum current capabilities.