Local electric fields are appeared in dielectric and semiconductors due to the destruction of symmetry, creating the vacancies, point defects and chemical impurities in material. By increasing in external electric field value there are numerous structural changes will be generated. Some of them will produce such great local fields that will destroy all material or change its physical properties. The studying the nature of local electric fields will open new tendency in electronic device producing, from one side, and, help to change materials’ properties according to our needs, from another side. Point defects in silicon films were characterized by using electron-paramagnetic resonance spectroscopy and laser picoseconds spectroscopy. Coupling two dangling bonds are transformed into A defect with coupling bonds by the following way according to Elsner theorem of matrix perturbation theory. The crystal phase destruction in nanocrystalline silicon film by applying external electric field was investigated by Raman spectroscopy. The possible mechanism of phase destruction was proposed.
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