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Dmitry E. MILOVZOROV, Laser-Assisted Photoprocesses in Nanostructured Silicon Films; Advanced NanoMaterials and Technologies for Energy Sector; 2017:1(1): 21-33
The optical quantum generation was experimentally observed by using silicon nanocrystalline film which was irradiated by second-harmonic of YAG:Nd3+ laser. Matrix Hamiltonian for a model of Si-Si-Si- bridge by small external field perturbation was proposed. The coherent solution for a system with master equations which described photo-assistant electron transport in one dimensional chain of coupled quantum wells with two energy levels was obtained. The decoherence of electronic processes of excitation and tunneling causes the destruction of laser generation. Such behavior of upper-level population by its rising up to saturation value can be explained strictly by decoherent conditions, the time of coherence decay were estimated, and the conditions by which the photoluminescence in polarized nanostructured silicon film was appeared are considered. There are coherent and decoherent modes in electron transport realizing optical quantum generation. Both of them are possible in nanostructured media that has its geometrical parameters which are comparable with Gauss laser beam pumped nanocrystals. Because, the strong local fields inside the stressed polarized nanocrystalline silicon film play a great role in tuning or detuning by variation of levels’ energetic positions and, therefore, result in optical photon emission.