Mohamed Houmad, Maryama Hammi, Abdallah El Kenz, Abdelilah Benyoussef; Effect of inter-distance on band gap of silicon carbide bilayers; Advanced NanoMaterials and Technologies for Energy Sector; 2019:3(4): 298-306
The structural stability and the total energy of silicon carbide like bilayers have been investigated using ab initio calculations. Firstly, we studied all configurations of silicon carbide like bilayers then we have varied the vertical distance d in all configurations staking AA and AB arrangement. Also, we have discussed the effect of vertical distance d on the band gap and on the total energy of SiC like bilayer. Our results show that the total energy depends on vertical distance and the band gap increases versus the vertical distance for all configurations, however it decreases as a function of the number of layers.